Products

Three Chemicals.
One Critical Purpose.

Each product is engineered to semiconductor-grade specifications, meeting or targeting SEMI international standards. Formulated for the specific demands of modern wafer fabrication and advanced packaging processes.

Planarization Chemical
CMP
CMP Slurry
Chemical Mechanical Planarization
Semiconductor Grade

Our flagship product. CMP slurry enables the precise planarization of wafer surfaces — a non-negotiable process step in multi-layer semiconductor fabrication. Our back-end oxide CMP slurry is formulated to deliver consistent, controlled removal rates with superior surface finish and minimal defect levels.

Primary Focus
Back-End Oxide CMP — Inter-Layer Dielectric Planarization
ApplicationOxide · ILD · STI Polishing
Particle TypeNano-scale Abrasive
Selectivity ControlOxide : Nitride Tunable
Semiconductor Solvent
IPA
Ultra-Pure Isopropyl Alcohol
2-Propanol · C₃H₈O
SEMI C7 Target Grade

Ultra-high-purity IPA is the primary solvent for semiconductor wafer cleaning, post-CMP rinsing, and surface preparation. Our IPA is formulated to meet and exceed SEMI C7 specifications, ensuring minimal metallic and particulate contamination that could compromise device yield.

Current Purity
99.99% — with Roadmap to 99.999% (Electronic Grade)
Purity (Current)≥ 99.99%
Purity (Roadmap)≥ 99.999% EG
ParticlesSEMI C7 Grade
Purity Roadmap
99.99%
Phase 1
99.999%
EG Grade
Custom
Advanced
Oxidizing Agent
H₂O₂
High-Purity Hydrogen Peroxide
Dihydrogen Dioxide
SEMI C30 Target Grade

Semiconductor-grade hydrogen peroxide is indispensable in RCA wet cleaning sequences (SC-1 and SC-2 baths), controlled oxidation steps, and advanced wet etching processes. Our H₂O₂ delivers exceptional chemical stability, ultra-low metallic contamination, and controlled decomposition kinetics.

Critical Process Role
RCA SC-1 / SC-2 Cleaning — Native Oxide Control
Concentration30% · 31% Aqueous
ApplicationRCA Clean · Wet Etch · Oxidation
GradeSEMI C30 Target